MJD42C 데이터시트 PDF ( Data sheet )

isc Silicon PNP Power Transistors INCHANGE Semiconductor MJD42C DESCRIPTION ·DC Current Gain -hFE = 30(Min)@ IC= -0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) ·Complement to Type MJD41C ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations for robust devi

SMD Type Transistors Complementary Power Transistors MJD41C(NPN) MJD42C(PNP) Features Lead Formed for Surface Mount Applications in Plastic Sleeves Monolithic Construction With Built in Base Emitter Resistors Pb-Free Packages are Available +09.70 .2 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2

MJD42C MJD42C General Purpose Amplifier Low Speed Switching Applications Load Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK, “- I” Suffix) Electrically Similar to Popular TIP42C 1 D-PAK 1.Base 1 I-PAK 3.Emitter 2.Collector PNP Epitaxial Silicon Transistor Absolut

MJD41C (NPN), MJD42C (PNP) Complementary Power Transistors DPAK for Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lead Version in Plastic Sleeves (

MJD112 Rev.E May.-2016 DATA SHEET 描述 , Descriptions TO-252 塑封封 NPN 半 三 管。Silicon NPN transistor in a TO-252 Plastic Package.  特征 , Features 直流 流增益高，E C 置阻尼二 管 性能 TIP112 等同。 High DC current gain, built-in a damper diode at E-C,electri

MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MJD112 Features Lead Free Finish, RoHS Compliant("P" Suffix designates RoHS Compliant. See ordering information) Case Material:Molded Plastic. U

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor MJD112 DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications(NO suffix) ·Straight lead(IPAK,“－I”suffix) ·Built-in a damper diode at E-C ·100% avalanche tested ·Minimum Lot-to-Lot variations for