MMBD352LT1 데이터시트 PDF ( Data sheet )

MMBD352LT1, MMBD353LT1, MMBD354LT1, MMBD355LT1 Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra fast switching circuits. Features 1 2 http:, , onsemi.com 3 SOT 23 (TO 236) CASE 318 Very Low Capaci

LESHAN RADIO COMPANY, LTD. Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra fast switching circuits. Very Low Capacitance Less Than 1.0 pF @ Zero Volts Low Forward Voltage 0.5 Volts (Typ) @ I F = 10

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBD352LT1, D Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra fast switching circuits. Very Low Capacitance Less Than 1.0 pF @ Zero Vo

MMBD352LT1G, MMBD353LT1G, NSVMMBD353LT1G, MMBD354LT1G, NSVMMBD354LT1G, MMBD355LT1G Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra fast switching circuits. Features Very Low Capacitance Less Than 1.0

MMB SERIES METALLIZED POLYESTER FILM CAPACITORS MMB METALLIZED POLYESTER FILM CAPACITORS MMB METALLIZED POLYESTER FILM CAPACITORS MMB

CYLINDRICAL GENERAL PURPOSE SURFACE MOUNT POWER RESISTOR METAL GLAZE™ ISO-9001 Registered MM SERIES · · · · Up to 2 watts 0.1 ohm to 2.2 megohm range Up to 1000 volts 150°C maximum operating temperature Size Code B F H 1 Metal GlazeTM thick film element fired at 1000°C to solid ceramic su

MMU 0102, MMA 0204, MMB 0207 - Professional Vishay Beyschlag Professional MELF Resistors FEATURES Approved according to EN 140401-803 Advanced thin film technology Excellent overall stability: exceeds Class 0.25 Force fitted steel caps, tin plated on nickel barrier Pure Sn termination on Ni b