MMBT5401 데이터시트 PDF ( Data sheet )

MMBT5401 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP) FEATURES * Power dissipation PCM: 0.3 W(Tamb=25OC) * Collector current ICM: - 0.6 A * Collector-base voltage V(BR)CBO: - 160 V * Operating and storage junction temperature range TJ,Tstg: -55OC to+150OC MECHANICAL DATA * Case: Molded plastic * Epo

MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features Halogen free available upon request by adding suffix "-HF" Collector Current: ICM=0.6A Collector-Base Voltage: V(BR)CBO=160V Operatin

SMD High Voltage Transistor (PNP) Features This device is designed for high voltage driver applications RoHS compliance Mechanical Data Case: Terminals: Weight: SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.008 gram SMD High Voltage Transistor (PNP) MMBT5401 SOT-23 Maximum

PNP General Purpose Transistor MMBT5401 FEATURES Ideal for Medium Power Amplification and Switching Complementary PNP Type available(MMBT5551) MECHANICAL DATA Case: SOT-23 Plastic Case material: “Green” molding compound, UL flammability classification 94V-0, (No Br. Sb. CI) Lead Free in R

MMB SERIES METALLIZED POLYESTER FILM CAPACITORS MMB METALLIZED POLYESTER FILM CAPACITORS MMB METALLIZED POLYESTER FILM CAPACITORS MMB

CYLINDRICAL GENERAL PURPOSE SURFACE MOUNT POWER RESISTOR METAL GLAZE™ ISO-9001 Registered MM SERIES · · · · Up to 2 watts 0.1 ohm to 2.2 megohm range Up to 1000 volts 150°C maximum operating temperature Size Code B F H 1 Metal GlazeTM thick film element fired at 1000°C to solid ceramic su

MMU 0102, MMA 0204, MMB 0207 - Professional Vishay Beyschlag Professional MELF Resistors FEATURES Approved according to EN 140401-803 Advanced thin film technology Excellent overall stability: exceeds Class 0.25 Force fitted steel caps, tin plated on nickel barrier Pure Sn termination on Ni b