MMBT5401L 데이터시트 PDF ( Data sheet )

MMBT5401L, SMMBT5401L, NSVMMBT5401L High Voltage Transistor PNP Silicon Features S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC Q101 Qualified and PPAP Capable These Devices are Pb Free, Halogen Free, BFR Free and are RoHS Compli

RoHS MMBT5401LT1 TRANSISTOR (PNP) SOT-23 Plastic-Encapsulate Transistors Features DPower dissipation PCM : 0.3 W (Tamb=25OC) TCollector current .,LICM : -0.6A Collector-base Voltage V(BR)CBO :-160V OOperating and storage junction temperature range CTj, Tstg : -55OC to +150OC 2.9 1.9 0.95 0.95 0.4

TIGER ELECTRONIC CO.,LTD MMBT5401LT1 PNP EPITAXIAL PLANAR TRANSISTOR Description The MMBT5401LT1 is designed for general purpose applications requiring high breakdown voltages. Features High Collector-Emitter Breakdown Voltage. BVCEO=150V(@ IC=1mA) Complements to NPN Type MMBT5551LT1. Absolute

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors MMBT5401LT1 TRANSISTOR (PNP) FEATURES Power dissipation PCM: 0.3 W (Tamb=25℃) Collector current ICM: -0.6 Collector-base voltage A V(BR)CBO: -160 V Operating and storage junction temperature range

MMB SERIES METALLIZED POLYESTER FILM CAPACITORS MMB METALLIZED POLYESTER FILM CAPACITORS MMB METALLIZED POLYESTER FILM CAPACITORS MMB

CYLINDRICAL GENERAL PURPOSE SURFACE MOUNT POWER RESISTOR METAL GLAZE™ ISO-9001 Registered MM SERIES · · · · Up to 2 watts 0.1 ohm to 2.2 megohm range Up to 1000 volts 150°C maximum operating temperature Size Code B F H 1 Metal GlazeTM thick film element fired at 1000°C to solid ceramic su

MMU 0102, MMA 0204, MMB 0207 - Professional Vishay Beyschlag Professional MELF Resistors FEATURES Approved according to EN 140401-803 Advanced thin film technology Excellent overall stability: exceeds Class 0.25 Force fitted steel caps, tin plated on nickel barrier Pure Sn termination on Ni b