MMBT5550 데이터시트 PDF ( Data sheet )

SMD High Voltage Transistor (NPN) MMBT5550, MMBT5551 SMD High Voltage Transistor (NPN) Features NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications RoHS compliance Mechanical Data SOT-23 Case: Terminals: Weight: SOT-23, Plastic Package Solderable per MIL-STD-202G,

SMD Type Transistors Features NPN Silicon High Voltage Transistors MMBT5550 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 +0.12.4 -0.1 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current -continu

MMBT5550 CASE 318-02, 03, STYLE 6 SOT-23 (TO-236AA, AB) HIGH VOLTAGE TRANSISTOR NPN SILICON Refer to 2N5550 for graphs. MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Symbol vCEO vCB0 vEBO 'C THERMAL CHARACTERISTICS Char

MMBT5550 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN) FEATURES * Power dissipation PCM: 0.225 W(Tamb=25OC) * Collector current ICM: 0.6 A * Collector-base voltage V(BR)CBO: 160 V * Operating and storage junction temperature range TJ,Tstg: -55 OC to + 150OC MECHANICA DATA *Case: Molded plastic *Epoxy

MMB SERIES METALLIZED POLYESTER FILM CAPACITORS MMB METALLIZED POLYESTER FILM CAPACITORS MMB METALLIZED POLYESTER FILM CAPACITORS MMB

CYLINDRICAL GENERAL PURPOSE SURFACE MOUNT POWER RESISTOR METAL GLAZE™ ISO-9001 Registered MM SERIES · · · · Up to 2 watts 0.1 ohm to 2.2 megohm range Up to 1000 volts 150°C maximum operating temperature Size Code B F H 1 Metal GlazeTM thick film element fired at 1000°C to solid ceramic su

MMU 0102, MMA 0204, MMB 0207 - Professional Vishay Beyschlag Professional MELF Resistors FEATURES Approved according to EN 140401-803 Advanced thin film technology Excellent overall stability: exceeds Class 0.25 Force fitted steel caps, tin plated on nickel barrier Pure Sn termination on Ni b