MMBT9013 데이터시트 PDF ( Data sheet )

SMD General Purpose Transistor (NPN) Features NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications Mechanical Data Case: Terminals: Weight: SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.008 gram SMD General Purpose Transistor (NPN) MMBT9013 SOT-23

1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total Power Dissipation. (625mW) *High Collector Current. (500mA) *Excellent hFE linearity. *Complementary to MMBT9012 * ESD Rating Human Body Model: >4000 V ESD Rating Machine Model: >400 V ORDERING INFORMATION

MMBT9013 NPN Silicon Epitaxial Planar Transistors For switching and amplifier applications As complementary types the PNP transistors MMBT9012 is recommended. Absolute Maximum Ratings (Ta = 25℃) PARAMETER Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Pow

MMBT9013【NPN Transistors , 200mW , SOT-23】 NPN Silicon Epitaxial Planar Transistors Features ◆ Switching and Amplifier applications PACKAGE OUTLINE Absolute Maximum Ratings【TA=25℃】 Parameter Symbol Min Typ Max Collector Emitter Voltage Emitter Base Voltage Collector Current VCE

MMB SERIES METALLIZED POLYESTER FILM CAPACITORS MMB METALLIZED POLYESTER FILM CAPACITORS MMB METALLIZED POLYESTER FILM CAPACITORS MMB

CYLINDRICAL GENERAL PURPOSE SURFACE MOUNT POWER RESISTOR METAL GLAZE™ ISO-9001 Registered MM SERIES · · · · Up to 2 watts 0.1 ohm to 2.2 megohm range Up to 1000 volts 150°C maximum operating temperature Size Code B F H 1 Metal GlazeTM thick film element fired at 1000°C to solid ceramic su

MMU 0102, MMA 0204, MMB 0207 - Professional Vishay Beyschlag Professional MELF Resistors FEATURES Approved according to EN 140401-803 Advanced thin film technology Excellent overall stability: exceeds Class 0.25 Force fitted steel caps, tin plated on nickel barrier Pure Sn termination on Ni b