Datasheet MRF559G Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	MRF559G	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF559 MRF559G * G Denotes RoHS Complaint, Pb Free Terminal Finish Features • Specified @ 12.5 V, 870 MHz Characteristics • Output Power = .5 W • Minimum Gain = 8.0 dB • Efficiency 50% • Cost Effective Macro X Package • Electroless Tin Plat	Advanced Power Technology

MRF5 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
MRF515	High Frequency Transistor	Motorola Semiconductors
MRF5015	N-CHANNEL BROADBAND RF POWER FET MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF5015/D The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband perfo	Motorola Semiconductors
MRF5811LT1	NPN Silicon High Frequency Transistor MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF5811LT1/D The RF Line NPN Silicon High-Frequency Transistor • • • • Designed for high current, low power amplifiers up to 1.0 GHz. Low Noise (2.0 dB @ 500 MHz) Low Intermodulation Distortion High Gain Stat	Motorola Semiconductors

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Número de pieza	Descripción	Fabricantes	PDF
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