Datasheet MRF5812G Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	MRF5812G	Bipolar Junction Transistor MRF5812, R1, R2 MRF5812G, R1, R2 * G Denotes RoHS Compliant, Pb free Terminal Finish Features • • • • Low Noise - 2.5 dB @ 500 MHZ Associated Gain = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA Cost Effective SO-8 package SO-8 R1 suffix–Tape and Reel, 500 units R2 suffix–Tape and Reel,	Advanced Power Technology

MRF58 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
MRF5811LT1	NPN Silicon High Frequency Transistor MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF5811LT1/D The RF Line NPN Silicon High-Frequency Transistor • • • • Designed for high current, low power amplifiers up to 1.0 GHz. Low Noise (2.0 dB @ 500 MHz) Low Intermodulation Distortion High Gain Stat	Motorola Semiconductors
MRF586	NPN Silicon High Frequency Transistor MRF586 NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 B ØA 45° C DESCRIPTION: E ØD The MRF586 is a High Frequency Transistor Designed for High Gain Low Noise CATV, and MATV Amplifier Applications. F G H MAXIMUM RATINGS IC VCE PDISS TJ TSTG θJC O O 200 mA 1	ASI
MRF5812	Bipolar Junction Transistor MRF5812, R1, R2 MRF5812G, R1, R2 * G Denotes RoHS Compliant, Pb free Terminal Finish Features • • • • Low Noise - 2.5 dB @ 500 MHZ Associated Gain = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA Cost Effective SO-8 package SO-8 R1 suffix–Tape and Reel, 500 units R2 suf	Advanced Power Technology

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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