NE02132 데이터시트 PDF ( Data sheet )

NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES HIGH INSERTION GAIN: 18.5 dB at 500 MH- LOW NOISE FIGURE: 1.5 dB at 500 MHz E NE021 SERIES HIGH POWER GAIN: 12 dB at 2 GHz B LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GH- Gain Compression s r e b m : u E n T t O r e a N r p a E S ng heet A i

NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES HIGH INSERTION GAIN: 18.5 dB at 500 MH- LOW NOISE FIGURE: 1.5 dB at 500 MH- HIGH POWER GAIN: 12 dB at 2 GH- LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GH- Gain Compression B E NE021 SERIES DESCRIPTION NEC's NE021 series of NPN silicon transistor