NPT2018 데이터시트 PDF ( Data sheet )

NPT2018 Preliminary Gallium Nitride 48V, 12.5W, DC-6 GH- HEMT Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology Features Suitable for linear and saturated applications Tunable from DC-6 GH- 48V Operation Industry Standard Plastic Package High Drain Efficiency (>60%

NPT1015B GaN Wideband Transistor 28 V, 45 W DC - 3.5 GHz Features GaN on Si HEMT D-Mode Transistor Suitable for linear and saturated applications Tunable from DC - 3.5 GH- 28 V Operation 12 dB Gain @ 2.5 GH- 54 % Drain Efficiency @ 2.5 GH- 100 % RF Tested Standard metal ceramic package with

NPT1015B GaN Wideband Transistor 28 V, 45 W DC - 3.5 GHz Features GaN on Si HEMT D-Mode Transistor Suitable for linear and saturated applications Tunable from DC - 3.5 GH- 28 V Operation 12 dB Gain @ 2.5 GH- 54 % Drain Efficiency @ 2.5 GH- 100 % RF Tested Standard metal ceramic package with

Naina Semiconductor Ltd. Press Fit Triac ½”, 15 Amps Features Improved glass passivation for high reliability Exceptional stability at high temperatures Metric thread type available Low thermal resistance NPT15 TO-203, F Electrical Characteristics (TA = 250C unless otherwise specified) Par