NVJS4405N 데이터시트 PDF ( Data sheet )

NTJS4405N, NVJS4405N Small Signal MOSFET 25 V, 1.2 A, Single, N Channel, SC 88 Features Advance Planar Technology for Fast Switching, Low RDS(on) Higher Efficiency Extending Battery Life AEC Q101 Qualified and PPAP Capable NVJS4405N These Devices are Pb Free and are RoHS Compliant Application

NTJD4401N, NVJD4401N Small Signal MOSFET 20 V, Dual N Channel, SC 88 ESD Protection Features Small Footprint (2 x 2 mm) Low Gate Charge N Channel Device ESD Protected Gate Same Package as SC 70 (6 Leads) AEC Q101 Qualified and PPAP Capable NVJD4401N These Devices are Pb Free and are RoHS Co

NVJD5121N Power MOSFET 60 V, 300 mA, Dual N Channel with ESD Protection, SC 88 Features Low RDS(on) Low Gate Threshold Low Input Capacitance ESD Protected Gate NVJD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC Q101 Qualified and PPAP C

NVJS4151P Trench Power MOSFET 20 V, 4.1 A, Single P Channel, SC 88 Features Leading Trench Technology for Low RDS(ON) Extending Battery Life SC 88 Small Outline (2x2 mm) for Maximum Circuit Board Utilization, Same as SC 70 6 Gate Diodes for ESD Protection AEC Q101 Qualified and PPAP Capable