OD-880F 데이터시트 PDF ( Data sheet )

HIGH-POWER GaAlAs IR EMITTERS 1.00 MIN. GLASS DOME OD-880F FEATURES High reliability liquid-phase epitaxially grown GaAlAs 880nm peak emission for optimum matching with ODD-45W photodiode Wide range of linear power output Hermetically sealed TO-46 package Narrow angle for long distance applica

HIGH-POWER GaAlAs IR EMITTERS 1.00 MIN. GLASS DOME OD-880F FEATURES ANODE (CASE) .209 .212 High reliability liquid-phase epitaxially grown GaAlAs 880nm peak emission for optimum matching with ODD-45W photodiode Wide range of linear power output Hermetically sealed TO-46 package .041 .015 .1

HIGH TEMPERATURE GaAlAs IR EMITTERS 1.00 MIN. GLASS DOME ANODE (CASE) .015 .209 .220 OD-880FHT FEATURES Extended operating temperature range No internal coatings No derating or heat sink required to 80°C All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise spec

SUPER HIGH-POWER GaAlAs IR EMITTERS .130 MAX EPOXY .039 .048 .018 OD-100 FEATURES ANODE (CASE) .357 .362 .100 Ultra high power output Four wire bonds on die corners Very uniform optical beam Standard 3-lead TO-39 hermetic package Chip size .030 x .030 inches .031 .014 .018 .500 CATHODE .

HIGH-POWER GaAlAs IR EMITTERS 1.00 MIN. GLASS DOME .015 OD-24F2 FEATURES ANODE (CASE) .209 .220 High current capability 880nm peak emission for optimum matching with ODD-45W photodiode Hermetically sealed TO-46 package Narrow angle of emission .041 .183 .186 .152 .154 .017 .100 .030 .0

HIGH-POWER GaAlAs EMITTER CHIPS .024 .005 .006 D 2 PLACES OD-24x24-C FEATURES High current capability 2 bond pads for uniform output .024 Gold contacts for high reliability bonding High reliability LPE GaAlAs IRLED chips All dimensions are nominal values in inches unless otherwise specifie