P0260AT 데이터시트 PDF ( Data sheet )

P0260AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 4.4Ω @VGS = 10V ID 2.8A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS, TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Cu

P0260ATF , P0260ATFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 4.4Ω @VGS = 10V ID 2A TO-220F TO-220FS 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS, TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 600 Ga

P0260ATF , P0260ATFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 4.4Ω @VGS = 10V ID 2A TO-220F TO-220FS 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS, TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 600 Ga


   
 
      
     

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05316 Only One Name Means ProTek’Tion™ P0201D05C low capacitance miniature TVS ARRAY Description The P0201D05C is a transient voltage suppressor array (TVS) designed to protect applications such as wireless telecommunication devices and portable electronics. The P0201D05C is available in a bi

05393 Only One Name Means ProTek’Tion™ P0201V05 ultra low capacitance esd protection component Description The P0201V05 is an ultra low capacitance ESD component designed to protect very high-speed data interfaces. The device has a typical capactiance of only 0.15pF (I, O to GND) and is compa