P1006BT 데이터시트 PDF ( Data sheet )

NIKO-SEM N-Channel Enhancement Mode P1006BT Field Effect Transistor TO-220 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 10mΩ ID 61A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS, TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Sour

P1006BT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 10mΩ @VGS = 10V ID 61A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS, TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Dra

NIKO-SEM N-Channel Enhancement Mode P1006BTF Field Effect Transistor TO-220F Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 10mΩ ID 47A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS, TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-So

P1006BTF , P1006BTFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 10mΩ @VGS = 10V ID 47A TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS, TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 60 Gate-Source Voltage

Bulletin I27125 rev. A 04, 99 P100 SERIES PASSIVATED ASSEMBLED CIRCUIT ELEMENTS Features Glass passivated junctions for greater reliability Electrically isolated base plate Available up to 1200 V RRM, V DRM High dynamic characteristics Wide choice of circuit configurations Simplified mechanical d

P 1000 A ... P 1000 M Silicon Rectifiers Silizium Gleichrichter Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case Kunststoffgeh use Weight approx. Gewicht ca. Plastic material has UL classification 94V-0 Geh usematerial UL94V-0 klassifiziert D

P 1000 A....P 1000 S 0, :  ;  4  ;  ; . +.  4  ;  ; .   ;    ; ,  26 7 $ 8 2: 7 $ 8 2:: 7 $ 8  $ $ $ $ $ $ $ $   = ; . Axial lead diode Standard silicon rectifier diodes P 1000 A....P 1000 S Forward Current: 10 A Reverse Voltage: 50 t