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Datasheet P60B6EL Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | P60B6EL | Power MOSFET, Transistor Nch
P60B6EL
PowerMOSFET
■外観図 OUTLINE Package：FB
Unit：mm
60V60A
特長
煙面実装タイプ 煙低オン抵抗 煙４.５V駆動 煙低容量
Feature
煙SMD 煙LowRON 煙4.5VGateDrive 煙LowCapacitance
P60B6EL 000000
外形図については新電元 Webサイトをご参照下さい |  SHINDENGEN | mosfet |
P60 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | P6002A | solid state crowbar devices Teccor Electronics data | | |
| 2 | P6002ACMC | solid state crowbar devices Teccor Electronics data | | |
| 3 | P6002AD | solid state crowbar devices Teccor Electronics data | | |
| 4 | P6002CA | solid state crowbar devices Teccor Electronics data | | |
| 5 | P6002OAG | N & P-Channel Enhancement Mode MOSFET P6002OAG
N&P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 60mΩ @VGS = 4.5V
-20V
115mΩ @VGS = -4.5V
ID 3.4A -2.5A
Channel N P
TSOP-6
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
CH. LIMITS
Drain-Source Voltage
 UNIKC mosfet | | |
| 6 | P6002Z | solid state crowbar devices Teccor Electronics data | | |
| 7 | P6003QEA | P&N-Channel Enhancement Mode MOSFET P6003QEA
N&P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 24mΩ @VGS = 10V
-30V
60mΩ @VGS = -10V
ID 20A -12A
Channel N P
PDFN 3x3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
CH. LIMITS
Drain-Source Voltage
N UNIKC mosfet | |
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