P75N06 데이터시트 PDF ( Data sheet )

PJP75N06 60V N-Channel Enhancement Mode MOSFET FEATURES RDS(ON), VGS@10V,IDS@30A=13mΩ RDS(ON), [email protected],IDS@30A=18mΩ Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Specially Designed for Converters and Power Motor Controls Fully Characterized Avalan

CEP75N06, CEB75N06 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 87A, RDS(ON) = 12mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-26

P7502CMG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 75mΩ @VGS = 4.5V ID 3A SOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS, TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±16 Continuous Dr

P7503BMG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 75mΩ @VGS = 4.5V ID 2.5A SOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS, TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Cur

AUO Confidential For ELTECH Internal Use Only On 2014, 10, 08 P750QVN01.0 Product Specification Rev. 0.0 Model Name: P750QVN01.0 Issue Date : 2014, 08, 22 ( )Preliminary Specifications ( )Final Specifications Customer Signature Date AUO Date Approved By _________________________________ Approv