P85FG6EAL 데이터시트 PDF ( Data sheet )

Nch PowerMOSFET P85FG6EAL ■外 OUTLINE Package：FG Unit：mm 60V85A 特長 煙面 タイプ 煙低オン抵抗 煙４.５V 動 煙低容量 Feature 煙SMD 煙LowRON 煙4.5VGateDrive 煙LowCapacitance 85FG6EAL 000 000 外形 については新電元 Webサイトをご 照下さい。捺印�

P8503BMA N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 85mΩ @VGS = 10V ID 2.4A SOT-23(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS, TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pu

P8503BMG N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 85mΩ @VGS = 10V ID 2.4A SOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS, TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulse

S3C852B, P852B 8-BIT CMOS MICROCONTROLLERS USER'S MANUAL Revision 0 Important Notice Information in this publication has been carefully checked and is believed to be entirely accurate at the time of publication. SAMSUNG assumes no responsibility, however, for possible errors or omissions, or for