PBSS5350T 데이터시트 PDF ( Data sheet )

DISCRETE SEMICONDUCTORS DATA SHEET PBSS5350T 50 V, 3 A PNP low VCEsat (BISS) transistor Product speci cation Supersedes data of 2002 Aug 08 2004 Jan 13 Philips Semiconductors Product speci cation 50 V, 3 A PNP low VCEsat (BISS) transistor FEATURES Low collector-emitter saturation voltage VCEsa

DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS2515VS 15 V low VCEsat NPN double transistor Product speci cation Supersedes data of 2001 Sep 13 2001 Nov 07 Philips Semiconductors Product speci cation 15 V low VCEsat NPN double transistor FEATURES 300 mW total power dissipation Very small 1.6

PBSS2515E 15 V, 0.5 A NPN low VCEsat (BISS) transistor Rev. 01 18 April 2005 Product data sheet 1. Product pro le 1.1 General description NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD plastic package. PNP complement: PBSS3515E. 1.2 Features s s s s s Low

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PBSS2515F 15 V low VCEsat NPN transistor Product speci cation Supersedes data of 2001 Jan 26 2001 Sep 21 Philips Semiconductors Product speci cation 15 V low VCEsat NPN transistor FEATURES Low collector-emitter saturation voltage High current capab