PBSS9410PA 데이터시트 PDF ( Data sheet )

PBSS9410PA 100 V, 2.7 A PNP low VCEsat (BISS) transistor Rev. 01 11 May 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic pack

DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS2515VS 15 V low VCEsat NPN double transistor Product speci cation Supersedes data of 2001 Sep 13 2001 Nov 07 Philips Semiconductors Product speci cation 15 V low VCEsat NPN double transistor FEATURES 300 mW total power dissipation Very small 1.6

PBSS2515E 15 V, 0.5 A NPN low VCEsat (BISS) transistor Rev. 01 18 April 2005 Product data sheet 1. Product pro le 1.1 General description NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD plastic package. PNP complement: PBSS3515E. 1.2 Features s s s s s Low

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PBSS2515F 15 V low VCEsat NPN transistor Product speci cation Supersedes data of 2001 Jan 26 2001 Sep 21 Philips Semiconductors Product speci cation 15 V low VCEsat NPN transistor FEATURES Low collector-emitter saturation voltage High current capab