PTB23005X 데이터시트 PDF ( Data sheet )

DISCRETE SEMICONDUCTORS DATA SHEET PTB23001X; PTB23003X; PTB23005X NPN microwave power transistors Product speci cation Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Feb 19 Philips Semiconductors Product speci cation NPN microwave power transistors FEATURES Dif

e PTB 20003 4 Watts, 915 960 MH- Cellular Radio RF Power Transistor Description The 20003 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 915 to 960 MH- frequency band. Rated at 4 Watts minimum output power, it may be used for both CW and PEP applicati

e PTB 20004 50 Watts, 860 900 MH- Cellular Radio RF Power Transistor Description The 20004 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MH- frequency band. Rated at 50 watts minimum output power, it may be used for both CW and PEP applica

e PTB 20005 15 Watts, 860 900 MH- Cellular Radio RF Power Transistor Description The 20005 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MH- frequency band. Rated at 15 watts minimum output power, it may be used for both CW and PEP applica