R1RW0408D 데이터시트 PDF ( Data sheet )

이 부품은 4M High Speed SRAM의 기능을 가지고 있습니다.

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번호	부품번호	상세설명 및 전자부품 기능	제조사
1	R1RW0408D Renesas	4M High Speed SRAM R1RW0408D Series 4M High Speed SRAM (512-kword × 8-bit) REJ03C0111-0200 Rev. 2.00 Dec.1.2008 Description The R1RW0408D is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit
2	R1RW0408DGE-0PR Renesas	4M High Speed SRAM R1RW0408D Series 4M High Speed SRAM (512-kword × 8-bit) REJ03C0111-0200 Rev. 2.00 Dec.1.2008 Description The R1RW0408D is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit
3	R1RW0408DGE-2LR Renesas	4M High Speed SRAM R1RW0408D Series 4M High Speed SRAM (512-kword × 8-bit) REJ03C0111-0200 Rev. 2.00 Dec.1.2008 Description The R1RW0408D is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit
4	R1RW0408DGE-2PR Renesas	4M High Speed SRAM R1RW0408D Series 4M High Speed SRAM (512-kword × 8-bit) REJ03C0111-0200 Rev. 2.00 Dec.1.2008 Description The R1RW0408D is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit
데이터시트 다운로드

부품번호	상세설명	제조업체	PDF
R1RP0404D	4M High Speed SRAM R1RP0404D Series 4M High Speed SRAM (1-Mword × 4-bit) REJ03C0116-0100Z Rev. 1.00 Mar.12.2004 Description The R1RP0404D is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit de	Renesas
부품번호	상세설명	제조업체	PDF
R1RP0404DGE-2LR	4M High Speed SRAM R1RP0404D Series 4M High Speed SRAM (1-Mword × 4-bit) REJ03C0116-0100Z Rev. 1.00 Mar.12.2004 Description The R1RP0404D is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit de	Renesas
부품번호	상세설명	제조업체	PDF
R1RP0404DGE-2PR	4M High Speed SRAM R1RP0404D Series 4M High Speed SRAM (1-Mword × 4-bit) REJ03C0116-0100Z Rev. 1.00 Mar.12.2004 Description The R1RP0404D is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit de	Renesas

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DataSheet.kr | 2020 | 연락처 | 링크모음 | 신규 | 사이트맵 : 1, 2