RBV2506 데이터시트 PDF ( Data sheet )

Production specification Silicon Bridge Rectifiers RBV25005--RBV2510 FEATURES Rating to 1000V PRV Surge overload rating to 300 Amperes peak Ideal for printed circuit board Reliable low cost construction utilizing molded Pb Lead-free plastic technique results in inexpensive product Lead s

RBV25005-RBV2510 Silicon Bridge Rectifiers VOLTAGE RANGE: 50 --- 1000 V CURRENT: 25.0 A Features Rating to 1000V PRV Surge overload rating to 200 Am peres peak Ideal for printed circuit board Reliable low cos t cons truction utilizing m olded plas tic technique res ults in inexpens ive product Lead

RBV2500 - RBV2510 PRV : 50 - 1000 Volts Io : 25 Amperes FEATURES : * * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop High case dielectric strength of 2000 V DC Ideal for printed circuit board Very good heat dissipation

Bridge Diodes (Schottky Barrier) Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) IFSM (A) Tj (°C) Tstg (°C) VF (V) max per element Electrical Characteristics (Ta = 25°C) IR (mA) VR = VRM max per element Others Rth ( j-c) IF , IRP (mA) (°C, W) Mass Fig. (g) 50H- With Half-cycl

Bridge Diodes Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) With Heatsink Electrical Characteristics (Ta = 25°C) Tstg (°C) VF (V) max per IF element (A) IR ( A) VR = VRM IR (H) ( A) VR=VRM, Tj=100°C Rth ( j-c) (°C, W) Others Mass Fig. (g) IFSM (A) 50H- Half-cycle Sinewave

Bridge Diodes Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) With Heatsink Electrical Characteristics (Ta = 25°C) Tstg (°C) VF (V) max per IF element (A) IR ( A) VR = VRM IR (H) ( A) VR=VRM, Tj=100°C Rth ( j-c) (°C, W) Others Mass Fig. (g) IFSM (A) 50H- Half-cycle Sinewave