RD02MUS1 데이터시트 PDF ( Data sheet )

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS1 0.2+, -0.05 (0.22) (0.22) (0.25) RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W DESCRIPTION RD02MUS1 is a MOS FET type transistor specifically designed for VHF, UHF RF po -wer ampl

< Silicon RF Power MOS FET (Discrete) > RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W OUTLINE DRAWING 4.6+, -0.05 3.3+, -0.05 0.8+, -0.05 RD02MUS1B is a MOS FET type transistor specifically designed for VHF, UHF RF power amplifiers applications. RD02MUS1B improved a dr

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD00HHS1 4.4+, -0.1 1.6+, -0.1 LOT No. 3.9+, -0.3 3 1.5+, -0.1 0. 1 RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor 30MHz,0.3W OUTLINE DRAWING 1.5+, -0.1 RD00HHS1 is a MOS FET type transistor spe

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD00HVS1 4.4+, -0.1 1.6+, -0.1 LOT No. 3.9+, -0.3 RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically designed for VHF, UHF RF amplifiers

Ordering number : ENA1704 RD0106T SANYO Semiconductors DATA SHEET RD0106T Features Diffused Junction Silicon Diode Low VF High-Speed Switching Diode High breakdown voltage (VRRM=600V). Fast reverse recovery time. Low forward voltage (VF max=1.3V). Low switching noise. Halogen free co