RD09MUP2 데이터시트 PDF ( Data sheet )

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD09MUP2 (a) 0.2+, -0.05 8.0+, -0.2 0.65+, -0.2 (c) (b) (b) 7.0+, -0.2 6.2+, -0.2 5.6+, -0.2 4.2+, -0.2 RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W DESCRIPTION RD09MUP2 is a MOS FET type tran

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD00HHS1 4.4+, -0.1 1.6+, -0.1 LOT No. 3.9+, -0.3 3 1.5+, -0.1 0. 1 RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor 30MHz,0.3W OUTLINE DRAWING 1.5+, -0.1 RD00HHS1 is a MOS FET type transistor spe

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD00HVS1 4.4+, -0.1 1.6+, -0.1 LOT No. 3.9+, -0.3 RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically designed for VHF, UHF RF amplifiers

Ordering number : ENA1704 RD0106T SANYO Semiconductors DATA SHEET RD0106T Features Diffused Junction Silicon Diode Low VF High-Speed Switching Diode High breakdown voltage (VRRM=600V). Fast reverse recovery time. Low forward voltage (VF max=1.3V). Low switching noise. Halogen free co