RFD16N03L 데이터시트 PDF ( Data sheet )

SEMICONDUCTOR RFD16N03L, RFD16N03LSM December 1995 16A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs Features Packaging 16A, 30V rDS(ON) = 0.022Ω Temperature Compensating PSPICE Model Can be Driven Directly from CMOS, NMOS, and TTL Circuits DRAIN (FLANGE) J

RFD16N03L, RFD16N03LSM Data Sheet April 1999 File Number 4013.2 16A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of

SEMICONDUCTOR RFD16N03L, RFD16N03LSM December 1995 16A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs Features Packaging 16A, 30V rDS(ON) = 0.022Ω Temperature Compensating PSPICE Model Can be Driven Directly from CMOS, NMOS, and TTL Circuits DRAIN (FLANGE) J

RFD16N03L, RFD16N03LSM Data Sheet April 1999 File Number 4013.2 16A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of

SEMICONDUCTOR May 1997 RFD10P03L, RFD10P03LSM, RFP10P03L 10A, 30V, 0.200Ω, Logic Level P-Channel Power MOSFET Features Description 10A, 30V rDS(ON) = 0.200Ω Temperature Compensating PSPICE Model PSPICE Thermal Model Peak Current vs Pulse Width Curve UIS Rating Curve 175oC Operating Te

RFD10P03L, RFD10P03LSM, RFP10P03L Data Sheet July 1999 File Number 3515.2 10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optim