RFP12N10 데이터시트 PDF ( Data sheet )

RFM12N08, RFM12N10, RFP12N08, RFP12N10 Semiconductor Data Sheet October 1998 File Number 1386.2 [ , Title (RFM12 These are N-Channel enhancement mode silicon gate power eld effect transistors designed for applications such N08, RFM12 as switching regulators, switching converters, motor drivers,

Data Sheet RFP12N10L October 2013 N-Channel Logic Level Power MOSFET 100 V, 12 A, 200 mΩ These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automoti

RFP12N10L Data Sheet July 1999 File Number 1512.3 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET These are N-Channel enhancement mode silicon gate power eld effect transistors speci cally designed for use with logic level (5V) driving sources in applications such as programmable control

Model RFP-10-100RV Rev. B Flanged Resistors 10 Watts, 100Ω General Specifications Resistive Element Substrate Cover Lead(s) Mounting Flange Operating Temperature Thick film Beryllium oxide ceramic Alumina Ceramic 99.99% pure Silver (.005” thk) Copper, Nickel plated per QQ-N-290 -55 to +150°C (

Model RFP-10-50TV Flanged Terminations 10 Watts, 50 Ω Flanged Terminations General Specifications Resistive Element: Substrate: Cover: Mounting Flange: Lead(s): Thick film Beryllium oxide ceramic Alumina ceramic Copper, nickel plated per QQ-N-290 99.99% pure silver (.005” thk) Features DC -

Model RFP-10-50TVC Flanged Terminations 10 Watts, 50 Ω Flanged Terminations General Specifications Resistive Element: Substrate: Cover: Mounting Flange: Lead(s): Thick film Beryllium oxide ceramic Alumina ceramic Copper, nickel plated per QQ-N-290 99.99% pure silver (.005” thk) Features DC -