RFP70N06 데이터시트 PDF ( Data sheet )

Data Sheet September 2013 RFP70N06 N-Channel Power MOSFET 60V, 70A, 14 mΩ These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performanc

RFG70N06, RFP70N06, RF1S70N06SM Data Sheet July 1999 File Number 3206.5 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silic

SEMICONDUCTOR RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM December 1995 70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs Features 70A, 60V rDS(on) = 0.014Ω Temperature Compensated PSPICE Model Peak Current vs Pulse Width Curve UIS Rating Curve (Single Pulse) +175oC Oper

Model RFP-10-100RV Rev. B Flanged Resistors 10 Watts, 100Ω General Specifications Resistive Element Substrate Cover Lead(s) Mounting Flange Operating Temperature Thick film Beryllium oxide ceramic Alumina Ceramic 99.99% pure Silver (.005” thk) Copper, Nickel plated per QQ-N-290 -55 to +150°C (

Model RFP-10-50TV Flanged Terminations 10 Watts, 50 Ω Flanged Terminations General Specifications Resistive Element: Substrate: Cover: Mounting Flange: Lead(s): Thick film Beryllium oxide ceramic Alumina ceramic Copper, nickel plated per QQ-N-290 99.99% pure silver (.005” thk) Features DC -

Model RFP-10-50TVC Flanged Terminations 10 Watts, 50 Ω Flanged Terminations General Specifications Resistive Element: Substrate: Cover: Mounting Flange: Lead(s): Thick film Beryllium oxide ceramic Alumina ceramic Copper, nickel plated per QQ-N-290 99.99% pure silver (.005” thk) Features DC -