SD101B 데이터시트 PDF ( Data sheet )

Features For general purpose applications The low forward voltage drop and fast switching marking it ideal for protection of MOS devices,steering, biasing and couping diodes for fast switching and low logic level applications. Integrated protection ring against static discharge Low leakage current M

SD101A - SD101C FEATURES : For general purpose applications The LL101 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling di

SD101A (1N6263)...SD101C SILICON SCHOTTKY BARRIER DIODES for general purpose applications The SD101 Series is a metal on silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steer

® SD Series High Power Density, Low Profile, Shielded Inductors Description Six sizes of shielded drum core inductors with low profiles (as low as 1.0mm) and high power density Inductance range from .47uH to 1000uH Current range from 6.00 to 0.088 Amps Ferrite shielded, low EMI Applications

® SD Series High Power Density, Low Profile, Shielded Inductors Description Six sizes of shielded drum core inductors with low profiles (as low as 1.0mm) and high power density Inductance range from .47uH to 1000uH Current range from 6.00 to 0.088 Amps Ferrite shielded, low EMI Applications

SD1002 THRU SD1006 1.0A Surface Mount Schottky Barrier Rectifier Voltage Range 20 to 60 Volts 450m Watts Power Dissipation Features Schottky barrier chip Guard ring die construction for transient protection Low power loss, high efficiency High surge capability High current capability and low forwar