SD103AWS 데이터시트 PDF ( Data sheet )

SD103AWS, SD103BWS, SD103CWS Schottky Barrier Diode FEATURES - Low Forward Voltage Drop - Guard Ring Construction For Transient Protection - Negligible Reverse Recovery Time - Low Reverse Capacitance Pb Lead-free APPLICATIONS - Schotty barrier switching ORDERING INFORMATION Type No. Marking

Small Signal Schottky Diode SD103AWS , BWS , CWS Formosa MS List List................................................................................................. 1 Package outline............................................................................... 2 Features......................

MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# SD103AWS THRU SD103CWS Features Lead Free Finish, RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Guard Ring Co

RoHS SD103AWS-SD103CWS DFeatures · Low Forward Voltage Drop T· Guard Ring Construction for Transient Protection · Negligible Reverse Recovery Time O.,L· Low Reverse Capacitance SOD-323 1.70 2.65 1.30 0.30 1.00 IC CMaximum Ratings @ TA = 25°C unless otherwise specified Characteristic NPea

® SD Series High Power Density, Low Profile, Shielded Inductors Description Six sizes of shielded drum core inductors with low profiles (as low as 1.0mm) and high power density Inductance range from .47uH to 1000uH Current range from 6.00 to 0.088 Amps Ferrite shielded, low EMI Applications

® SD Series High Power Density, Low Profile, Shielded Inductors Description Six sizes of shielded drum core inductors with low profiles (as low as 1.0mm) and high power density Inductance range from .47uH to 1000uH Current range from 6.00 to 0.088 Amps Ferrite shielded, low EMI Applications

SD1002 THRU SD1006 1.0A Surface Mount Schottky Barrier Rectifier Voltage Range 20 to 60 Volts 450m Watts Power Dissipation Features Schottky barrier chip Guard ring die construction for transient protection Low power loss, high efficiency High surge capability High current capability and low forwar