SI6926ADQ 데이터시트 PDF ( Data sheet )

Si6926ADQ Vishay Siliconix Dual N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.030 at VGS = 4.5 V 20 0.033 at VGS = 3.0 V 0.035 at VGS = 2.5 V 0.043 at VGS = 1.8 V ID (A) 4.5 4.2 3.9 3.6 FEATURES Halogen-free RoHS COMPLIANT D1 D2 TSSOP-8 D1 S1 S1 G1 1 2 3 4 Top View Or

Si6040 N-Channel Enhancement MOSFET Si6040 Features ·Low On resistance. ·4.5V drive. ·RoHS compliant. 2,4 Package Dimensions TO-252 1 3 Specifications Absolute Maximum Ratings at Ta=250C Parameter Symbol Drain-to-Source Voltage VDSS Gate-to-Source Voltage VGSS Drain Current (DC) I

NEW Series SI Output to 100A, 1700 Vdc DC Solid-State Relay FEATURES, BENEFITS Latest generation of High Voltage IGBT Technology Innovative isolated driver ensures fast power transistor turn on and off and thus low power transient Ultra low output leakage current Low control current consumption

N-Channel 30-V (D-S) MOSFET Si6404DQ Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.009 at VGS = 10 V 30 0.010 at VGS = 4.5 V 0.014 at VGS = 2.5 V ID (A) 11 10 8.8 FEATURES Halogen-free TrenchFET® Power MOSFETS: 2.5 V Rated 30 V VDS APPLICATIONS Battery Switch Charger Switch