SIGC25T120C 데이터시트 PDF ( Data sheet )

Preliminary SIGC25T120C IGBT Chip in NPT-technology FEATURES: 1200V NPT technology 200 m chip positive temperature coefficient easy paralleling This chip is used for: BUP 213 C Applications: drives G E Chip Type SIGC25T120C VCE 1200V ICn 15A Die Size 5.71 x 4.53 mm2 Package Order

Preliminary SIGC25T120CL IGBT Chip in NPT-technology FEATURES: 1200V NPT technology 180 m chip low turn-off losses short tail current positive temperature coefficient easy paralleling This chip is used for: power module BSM15GD120DLC E3224 Applications: drives G C E Chip Type SIGC25T12

Preliminary SIGC25T120CS IGBT Chip in NPT-technology FEATURES: 1200V NPT technology 180 m chip low turn-off losses short tail current positive temperature coefficient easy paralleling This chip is used for: C Applications: drives, SMPS, resonant applications G E Chip Type SIGC25T12

Preliminary SIGC25T120CS2 IGBT Chip in NPT-technology FEATURES: 1200V NPT technology 175 m chip low turn-off losses short tail current positive temperature coefficient easy paralleling This chip is used for: IGBT Modules Applications: drives, SMPS, resonant applications C G E Chip Typ

SIGC04T60 IGBT Chip FEATURES: 600V Trench & Field Stop technology low VCE(sat) low turn-off losses short tail current positive temperature coefficient easy paralleling 3 This chip is used for: power module discrete components Applications: drives white goods resonant applications C G

SIGC04T60G IGBT Chip FEATURES: 600V Trench & Field Stop technology low VCE(sat) low turn-off losses short tail current positive temperature coefficient easy paralleling 3 This chip is used for: power module discrete components Applications: drives white goods resonant applications C