SPB80N06S2L-11 데이터시트 PDF ( Data sheet )

SPP80N06S2L-11 SPB80N06S2L-11 OptiMOS® Power-Transistor Feature N-Channel Product Summary VDS R DS(on) ID P- TO263 -3-2 55 11 80 P- TO220 -3-1 V mΩ A Enhancement mode Logic Level Avalanche rated dv, dt rated Type SPP80N06S2L-11 SPB80N06S2L-11 Package P- TO220 -3-1 P- TO263 -3-2 Orderi

SPP80N06S2L-11 SPB80N06S2L-11 Product Summary VDS R DS(on) ID P- TO263 -3-2 OptiMOS® Power-Transistor Feature N-Channel 55 11 80 P- TO220 -3-1 V mΩ A Enhancement mode Logic Level Avalanche rated dv, dt rated Type SPP80N06S2L-11 SPB80N06S2L-11 Package P- TO220 -3-1 P- TO263 -3-2 Orde

SPB-002 SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Designer's Data Sheet FEATURES: Designed for Space Use on Flexible Solar Pannels Hermetically Sealed. Wide Temperature Range: -

Preliminary Product Description Sirenza Microdevices’ SPB-2026Z is a high linearity single-stage class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a surface-mountable plastic encapsulated package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated wit

RFMD® SPB-2026Z 0.7 GH- to 2.2 GH- 2W InGaP Amplifier The SPB-2026Z is a high-performance, high-linearity 0.7 GH- to 2.2 GH- 2 watt single-stage Class AB heterojunction bipolar transistor (HBT) amplifier, housed in a surface-mountable, plastic encapsulated package. This InGaP amplifier is well sui