SPBTLE-RF 데이터시트 PDF ( Data sheet )

SPBTLE-RF Very low power module for Bluetooth® Smart v4.1 Features Bluetooth v4.1 compliant Supports master and slave modes Multiple roles supported simultaneously Embedded Bluetooth low energy protocol stack GAP, GATT, SM, L2CAP, LL, RFPHY Bluetooth low energy profiles provided separately

SPB-002 SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Designer's Data Sheet FEATURES: Designed for Space Use on Flexible Solar Pannels Hermetically Sealed. Wide Temperature Range: -

Preliminary Product Description Sirenza Microdevices’ SPB-2026Z is a high linearity single-stage class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a surface-mountable plastic encapsulated package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated wit

RFMD® SPB-2026Z 0.7 GH- to 2.2 GH- 2W InGaP Amplifier The SPB-2026Z is a high-performance, high-linearity 0.7 GH- to 2.2 GH- 2 watt single-stage Class AB heterojunction bipolar transistor (HBT) amplifier, housed in a surface-mountable, plastic encapsulated package. This InGaP amplifier is well sui