SS8550 데이터시트 PDF ( Data sheet )

SS8 550 TRANSISTOR(PNP) FEATURES High Collector Current Complementary to SS8050 SOT 23 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value VCBO Collector-Base Voltage -40 VCEO Collector-Emitter Voltage -25 VEBO Emitter-Base Voltage -5 IC Collector Current -1.5

Elektronische Bauelemente SS8550 PNP Silicon General Purpose Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES - Power dissipation PCM : 0.3 W 1 Base - Collector Current ICM : - 1.5 A - Collector-base voltage V(BR)CBO : - 40 V - Operating & stora

SS8550 Plastic-Encapsulate Transistors PNP Silicon 2 BASE 1 EMITTER COLLECTOR 3 TO-92 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation TA=25 C Junc

SS8550 TRANSISTOR (PNP) SOT-23 FEATURES Complimentary to SS8050 MARKING: Y2 1. Base 2.Emitter 3.Collector MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Con

DATA SHEET SEMICONDUCTOR TO-92 Plastic-Encapsulate Transistors FEATURES Power dissipation PCM : 1 W :2W (TA=25℃) (TC=25℃) SS8050 TRANSISTOR (NPN) TO-92 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage VCEO C

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification SS8050 DESCRIPTION ·Low Saturation Voltage- : VCE(sat)= 0.5V(Max)@ IC =0.8A APPLICATIONS ·Designed for high-speed switching and Amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO

SS8050 TRANSISTOR (NPN)     
                   
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