Datasheet SSM3K7002BFU Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	SSM3K7002BFU	High-Speed Switching Applications Analog Switch Applications SSM3K7002BFU TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ) SSM3K7002BFU High-Speed Switching Applications Analog Switch Applications Unit: mm • • Small package Low ON-resistance : RDS(ON) = 3.3 Ω (max) (@VGS = 4.5 V) : RDS(ON) = 2.6 Ω (max) (@VGS =	Toshiba Semiconductor

SSM3K7002 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
SSM3K7002FU	High-Speed Switching Applications SSM3K7002FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K7002FU High Speed Switching Applications Analog Switch Applications • • Small package Low ON resistance : Ron = 3.3 Ω (max) (@VGS = 4.5 V) : Ron = 3.2 Ω (max) (@VGS = 5 V) : Ron = 3.0 Ω (max) (@VG	Toshiba Semiconductor
SSM3K7002F	High-Speed Switching Applications SSM3K7002F TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM3K7002F High-Speed Switching Applications Analog Switch Applications • • Small package Low ON-resistance : Ron = 3.3 Ω (max) (@VGS = 4.5 V) 0.95 0.95 2.9±0.2 +0.5 2.5-0.3 +0.25 1.5-0.15 +0.1 0.4-0.05	Toshiba Semiconductor
SSM3K7002BF	Field Effect Transistor SSM3K7002BF TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ) SSM3K7002BF High-Speed Switching Applications Analog Switch Applications • • Small package Low ON-resistance : RDS(ON) = 3.3 Ω (max) (@VGS = 4.5 V) : RDS(ON) = 2.6 Ω (max) (@VGS = 5 V) : RDS(	Toshiba Semiconductor

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