SSP4N60 데이터시트 PDF ( Data sheet )

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V Lower RDS(ON) : 2.037 Ω (Typ.) SSP4N60AS BVDSS = 600 V RDS(on) = 2.5 Ω ID = 4 A TO-

SSP4N60B, SSS4N60B SSP4N60B, SSS4N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistanc

SSP-T Series (SSP-T5) Surface Mount Quart- Crystal Units for Low Frequencies FEATURES New Product This type with height 2.1mm Max. Small mounting area of 23.4mm2. SMD type suitable for automatic & high density surface mounting. Plastic mold package containing highly reliable tubular type qua

SSP-T Series (SSP-T5) Surface Mount Quart- Crystal Units for Low Frequencies FEATURES New Product This type with height 2.1mm Max. Small mounting area of 23.4mm2. SMD type suitable for automatic & high density surface mounting. Plastic mold package containing highly reliable tubular type qua

Owner’s Manual SSP100 Surround Sound Processor SSP80 Surround Sound Processor www.halcro.com 1 Contents Introduction ................................................3 Important Safety Information...................5 Symbols ......................................................... 5 Electri