SSW1N60B 데이터시트 PDF ( Data sheet )

SSW1N60B , SSI1N60B November 2001 SSW1N60B , SSI1N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize

F-209 SSW 125 01 G P SSQ 115 04 S T SOCKET STRIP SSW & SSQ SERIES Mates With: TSW, MTSW, MTLW, LCW, EW, ZW, TSS, ZSS, TSM, TSSH SPECIFICATIONS For complete speci cations see www.samtec.com SSW or www.samtec.com SSQ Insulator Material: Black Liquid Crystal Polymer FILE NO. E111594 (-S & -D) or

Product Description Stanford Microdevices’ SSW-108 is a high performance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-mountable small outline plastic package. This single-pole, double-throw, non-reflective switch consumes less than 50uA and operates at -5V and

Product Description Stanford Microdevices SSW-124 is a high perfomance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-mountable 8-pin ceramic package. This single-pole, double-throw, non-reflective switch consumes less than 50uA and operates at -5V and 0V for con