STGD6NC60H 데이터시트 PDF ( Data sheet )

STGD6NC60H N-channel 600V - 7A - DPAK Very fast PowerMESH™ IGBT General features Type STGD6NC60H ■ ■ ■ VCES 600V VCE(sat)Max @25°C <2.5V IC @100°C 7A 3 1 Low on voltage drop (Vcesat) Low CRES , CIES ratio (no cross-conduction susceptibility) High frequency operation DPAK Descriptio

STGD6NC60HD N-CHANNEL 6A - 600V DPAK Very Fast PowerMESH™ IGBT TARGET SPECIFICATION Table 1: General Features TYPE STGD6NC60HDT4 s s s Figure 1: Package VCES 600 V VCE(sat) IC (Max) @25°C @100°C < 2.5 V 6A s s s s LOWER ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT LOSSES INC

S T G 2017 S amHop Microelectronics C orp. May,18 2005 Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( mW ) Max ID 7A R DS (ON) S uper high dense cell design for low R DS (ON ). 20 @ V G S = 4.5V 28 @ V G S = 2.5V R ugged and reliab

Gr Pr STG2454 Ver 1.1 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 24V ID 7A R DS(ON) (m Ω) Max 17 @ VGS=4.0V 29 @ VGS=2.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD

S T G 2507 S amHop Microelectronics C orp. May,10 2005 Dual P -C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S -20V F E AT UR E S ( mW ) Max ID 6.2A R DS (ON) S uper high dense cell design for low R DS (ON ). 17 @ V G S = -4.5V 25 @ V G S = -2.5V R ugged and