STGW20NC60V 데이터시트 PDF ( Data sheet )

STGB20NC60V - STGP20NC60V STGW20NC60V 30 A - 600 V - very fast IGBT Features ■ ■ ■ High frequency operation up to 50 kH- Lower CRES , CIES ratio (no cross-conduction susceptibility) High current capability 1 2 3 1 2 3 Applications ■ ■ ■ TO-247 3 1 TO-220 High frequency inverters UP

STGW20NC60VD N-CHANNEL 30A - 600V TO-247 Very Fast PowerMESH™ IGBT Table 1: General Features TYPE STGW20NC60VD s s Figure 1: Package IC @100°C 30 A VCES 600 V VCE(sat) (Max) @25°C < 2.5 V s s s s s OFF LOSSES INCLUDE TAIL CURRENT LOSSES INCLUDE DIODE RECOVERY ENERGY HIGH CURRENT CAPABILIT

S T G 2017 S amHop Microelectronics C orp. May,18 2005 Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( mW ) Max ID 7A R DS (ON) S uper high dense cell design for low R DS (ON ). 20 @ V G S = 4.5V 28 @ V G S = 2.5V R ugged and reliab

Gr Pr STG2454 Ver 1.1 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 24V ID 7A R DS(ON) (m Ω) Max 17 @ VGS=4.0V 29 @ VGS=2.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD

S T G 2507 S amHop Microelectronics C orp. May,10 2005 Dual P -C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S -20V F E AT UR E S ( mW ) Max ID 6.2A R DS (ON) S uper high dense cell design for low R DS (ON ). 17 @ V G S = -4.5V 25 @ V G S = -2.5V R ugged and