STS1NC60 데이터시트 PDF ( Data sheet )

N-CHANNEL 600V - 12Ω - 0.3A - SO-8 PowerMESH™II MOSFET TYPE STS1NC60 s s s s s STS1NC60 VDSS 600 V RDS(on) < 15 Ω ID 0.3 A TYPICAL RDS(on) = 12Ω EXTREMELY HIGH dv, dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED SO-8 DESCRIPTION The PowerMESH™II i

Messrs : SPECIFICATION ITEM : DYNAMIC MICRO SPEAKER CUSTOMER’S MODEL : MODEL NUMBER : SIZE : STS-2308-01 Ø23 5.0T DATE OF APPROVAL 2007. 03.09 星 音 電 子 STAR ACOUSTICS CO. SEOJIN BLDG. 887-10, SHINCHUN-DONG, SHIHEUNG-SI, KYUNG GI-DO.KOREA. TEL : (031)404-4203 FAX : (031)318-8692 E-MA

STS-8857 Transmissive Switch Assembly Features Non contact switching Three wires for electrical connection Fast switching speed Description The STS-8857 consists of an infrared emitting diode and an NPN silicon phototransistor mounted on opposite sides of a 3.8 mm wide slot. Phototransistor swi

STS01DTP06 Dual NPN-PNP complementary Bipolar transistor General features VCE(sat) 0.35V ■ ■ ■ ■ hFE >100 IC 1A High gain Low VCE(sat) Simplified circuit design Reduced component count SO-8 Applications ■ ■ ■ Push-Pull or Totem-Pole configuration MOSFET and IGBT gate driving Mot