STW30NF20 데이터시트 PDF ( Data sheet )

STP30NF20 STW30NF20 N-channel 200V - 0.065Ω - 30A - TO-220, TO-247 Low gate charge STripFET™ Power MOSFET General features Type STP30NF20 STW30NF20 ■ ■ ■ ■ ■ VDSS 200V 200V RDS(on) 0.075Ω 0.075Ω ID 30A 30A PTOT 125W 125W 3 2 1 Gate charge minimized 100% avalanche tested Exce

STP30NF20 - STB30NF20 STW30NF20 N-channel 200V - 0.065Ω - 30A - TO-220, TO-247, D2PAK Low gate charge STripFET™ Power MOSFET Features Type STP30NF20 STW30NF20 STB30NF20 ■ ■ ■ ■ ■ VDSS 200V 200V 200V RDS(on) 0.075Ω 0.075Ω 0.075Ω ID 30A 30A 30A PTOT 125W 125W 125W TO-247 1 3 2

www.americanringmfg.com STW-195 Retaining Ring Spec Sheet Part Number: STW-195 STW - External JIS B 2804 Retaining Rings Ring Specs (D) Free Diameter: (t) Thickness: (b) Radial Wall: Groove Specs: (B) Application Diameter: (G) Groove Diameter: (W) Groove Width: Groove Depth: Other Specs Approximate

STH10NA50, FI STW10NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STH10NA50 STH10NA50FI STW10NA50 s s s s s s s V DSS 500 V 500 V 500 V R DS( on) < 0.8 Ω < 0.8 Ω < 0.8 Ω ID 9.6 A 5.6 A 9.6 A TO-247 TYPICAL RDS(on) = 0.7 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALA

® STW10NB60 N - CHANNEL 600V - 0.69Ω - 10A - TO-247 PowerMESH™ MOSFET TYPE ST W10NB60 s s s s s V DSS 600 V R DS(on) < 0.8 Ω ID 10 A TYPICAL RDS(on) = 0.69 Ω EXTREMELY HIGH dv, dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 1 2 3 DESCRIPTIO