STY80NM60N 데이터시트 PDF ( Data sheet )

STY80NM60N N-channel 600 V - 0.035 Ω - 80 A - Max247 second generation MDmesh™ Power MOSFET Preliminary Data Features Type VDSS 600 V RDS(on) < 0.040 Ω ID 80 A Pw 560 W STY80NM60N ■ ■ ■ 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Max247

STY100NM60N Features N-channel 600 V, 0.028 Ω typ., 98 A MDmesh™ II Power MOSFET in a Max247 package Datasheet production data Type STY100NM60N VDSS @ TJmax 650 V RDS(on) max < 0.029 Ω ID 98 A ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistan

N-CHANNEL 200V - 0.022Ω - 100A Max247 MESH OVERLAY™ Power MOSFET TYPE STY100NS20FD n n n n n n n STY100NS20FD VDSS 200V RDS(on) < 0.024Ω ID 100 A TYPICAL RDS(on) = 0.022Ω EXTREMELY HIGH dv, dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED ± 20V GATE TO SOURCE VOLTAGE RATING LO

STY130NF20D N-channel 200 V, 0.01 Ω typ., 130 A STripFET™ II with fast recovery diode Power MOSFET in a Max247 package Datasheet - production data Features Max247 3 2 1 Figure 1. Internal schematic diagram Order code VDS RDS(on) max. ID PTOT STY130NF20D 200 V 0.012 Ω 130 A 450 W Exce