TGA2503 데이터시트 PDF ( Data sheet )

TGA2503 13 - 17 GH- 2 Watt, 32dB Power Amplifier Key Features and Performance 33 dBm Midband Pout 32 dB Nominal Gain 10 dB Typical Return Loss Built-in Directional Power Detector with Reference 0. 50 m pHEMT Technology Bias Conditions: 7 V, 680mA Chip dimensions: 2.5 x 1.4 x 0.1 mm (98 x 55

Product Data Sheet 32 dBm Ku-Band Amplifier Key Features TGA2503-SM Typical Frequency Range: 12.5 - 16 GH- 32 dBm Nominal Psat 32 dB Nominal Gain 37 dBm Output TOI @ Pin = -20dBm 8 dB Typical Return Loss Bias Conditions: Vd = 6V, Idq = 600 mA (Id = 1200mA under RF drive) Package Dimensions

Advance Product Information Ku Band Power Amplifier TGA1045-EPU Key Features and Performance HFET Technology 12.5 -15.5 GH- Frequency Range > 3W Nominal Pout 24 dB Nominal Gain 9V @ 1.2A Bias Primary Applications Ku band Satellite Ground Terminal VSAT Point-to-Point Radio Release Status

Advance Product Information Ku Band Power Amplifier TGA1045-EPU Key Features and Performance HFET Technology 12.5 -15.5 GH- Frequency Range > 3W Nominal Pout 24 dB Nominal Gain 9V @ 1.2A Bias Primary Applications Ku band Satellite Ground Terminal VSAT Point-to-Point Radio Release Status

Advance Product Information Ka Band 2 Watt Power Amplifier Key Features and Performance 0.25 um pHEMT Technology 20 dB Nominal Gain 2W Nominal Pout -30 dBc IMR3 @ 26 dBm SCL Bias 7V @ 1.4 A Chip Dimensions 5.89 mm x 3.66 mm TGA1055-EPU Primary Applications LMDS Point-to-Point Radio Satel