TGA2513 데이터시트 PDF ( Data sheet )

TGA2513 Wideband LNA Key Features Frequency Range: 2-23 GH- 17 dB Nominal Gain 16 dBm Nominal P1dB < 2 dB Midband Noise Figure 0.15 um 3MI pHEMT Technology Nominal Bias: Vd = 5V, Id = 75 mA Chip Dimensions: 2.09 x 1.35 x 0.10 mm (0.082 x 0.053 x 0.004 in) Product Description The TriQuint TGA

Advance Product Information September 2, 2005 Wideband LNA with AGC Key Features TGA2513-EPU Frequency Range: 2-23 GH- 17 dB Nominal Gain > 30 dB Adjustable Gain with Vg2 16 dBm Nominal P1dB < 2 dB Midband Noise Figure 0.15 um 3MI pHEMT Technology Nominal Bias: Vd = 5V, Id = 75 mA Chip

Advance Product Information January 19, 2006 2-20 GH- LNA with AGC Key Features TGA2513-SM Frequency Range: 2-20 GH- 17 dB Nominal Gain > 30 dB Adjustable Gain with Vg2 16 dBm Nominal P1dB 2.5 dB Midband Noise Figure Bias Conditions: Vd=5V, Idq=75 mA, Vg2=2V Package Dimensions: 4.0 x 4.0

Advance Product Information Ku Band Power Amplifier TGA1045-EPU Key Features and Performance HFET Technology 12.5 -15.5 GH- Frequency Range > 3W Nominal Pout 24 dB Nominal Gain 9V @ 1.2A Bias Primary Applications Ku band Satellite Ground Terminal VSAT Point-to-Point Radio Release Status

Advance Product Information Ku Band Power Amplifier TGA1045-EPU Key Features and Performance HFET Technology 12.5 -15.5 GH- Frequency Range > 3W Nominal Pout 24 dB Nominal Gain 9V @ 1.2A Bias Primary Applications Ku band Satellite Ground Terminal VSAT Point-to-Point Radio Release Status

Advance Product Information Ka Band 2 Watt Power Amplifier Key Features and Performance 0.25 um pHEMT Technology 20 dB Nominal Gain 2W Nominal Pout -30 dBc IMR3 @ 26 dBm SCL Bias 7V @ 1.4 A Chip Dimensions 5.89 mm x 3.66 mm TGA1055-EPU Primary Applications LMDS Point-to-Point Radio Satel