TGAN40N110FD 데이터시트 PDF ( Data sheet )

Features 1100V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification Applications Induction Heating, Soft switching application TGAN40N110FD Field Stop Trench IGBT E GC Device TGAN40N

Advance Product Information Ku Band Power Amplifier TGA1045-EPU Key Features and Performance HFET Technology 12.5 -15.5 GH- Frequency Range > 3W Nominal Pout 24 dB Nominal Gain 9V @ 1.2A Bias Primary Applications Ku band Satellite Ground Terminal VSAT Point-to-Point Radio Release Status

Advance Product Information Ku Band Power Amplifier TGA1045-EPU Key Features and Performance HFET Technology 12.5 -15.5 GH- Frequency Range > 3W Nominal Pout 24 dB Nominal Gain 9V @ 1.2A Bias Primary Applications Ku band Satellite Ground Terminal VSAT Point-to-Point Radio Release Status

Advance Product Information Ka Band 2 Watt Power Amplifier Key Features and Performance 0.25 um pHEMT Technology 20 dB Nominal Gain 2W Nominal Pout -30 dBc IMR3 @ 26 dBm SCL Bias 7V @ 1.4 A Chip Dimensions 5.89 mm x 3.66 mm TGA1055-EPU Primary Applications LMDS Point-to-Point Radio Satel