TGF2021-04-SD 데이터시트 PDF ( Data sheet )

TGF2021-04-SD DC-4 GH- Packaged Power pHEMT Key Features Frequency Range: DC-4 GH- Package Dimensions: 4.5 x 4 x 1.5 mm Nominal 900 MH- Low Noise Application Board Performance: OTOI: 39.5 dBm Noise Figure: 0.6dB Gain: 16dB P1dB: 26.5dBm Input Return Loss: -8 dB Output Return Loss: -18 dB B

Product Data Sheet Discrete MESFET TGF1350-SCC Key Features and Performance 0.5 um x 300 um FET 1.5 dB Noise Figure with 11dB Associated Gain at 10 GH- 2.5 dB Noise Figure with 7 dB Associated Gain at 18 GH- All-gold Metallization for High Reliability Recessed Gate Structure Description The

Product Data Sheet Discrete MESFET TGF1350-SCC Key Features and Performance 0.5 um x 300 um FET 1.5 dB Noise Figure with 11dB Associated Gain at 10 GH- 2.5 dB Noise Figure with 7 dB Associated Gain at 18 GH- All-gold Metallization for High Reliability Recessed Gate Structure Description The

Applications Defense & Aerospace High-Reliability Test and Measurement Commercial Broadband Wireless TGF2018 180 um Discrete GaAs pHEMT Product Features Frequency Range: DC - 20 GH- 22 dBm Typical Output Power - P1dB 14 dB Typical Gain at 12 GH- 55% Typical PAE at 12 GH- 1 dB Typical NF