TGF2021-12 데이터시트 PDF ( Data sheet )

Advance Product Information September 19, 2005 DC - 12 GH- Discrete power pHEMT TGF2021-12 Key Features and Performance Frequency Range: DC - 12 GH- > 42 dBm Nominal Psat 58% Maximum PAE 11 dB Nominal Power Gain Suitable for high reliability applications 12mm x 0.35 m Power pHEMT Nominal

Product Data Sheet Discrete MESFET TGF1350-SCC Key Features and Performance 0.5 um x 300 um FET 1.5 dB Noise Figure with 11dB Associated Gain at 10 GH- 2.5 dB Noise Figure with 7 dB Associated Gain at 18 GH- All-gold Metallization for High Reliability Recessed Gate Structure Description The

Product Data Sheet Discrete MESFET TGF1350-SCC Key Features and Performance 0.5 um x 300 um FET 1.5 dB Noise Figure with 11dB Associated Gain at 10 GH- 2.5 dB Noise Figure with 7 dB Associated Gain at 18 GH- All-gold Metallization for High Reliability Recessed Gate Structure Description The

Applications Defense & Aerospace High-Reliability Test and Measurement Commercial Broadband Wireless TGF2018 180 um Discrete GaAs pHEMT Product Features Frequency Range: DC - 20 GH- 22 dBm Typical Output Power - P1dB 14 dB Typical Gain at 12 GH- 55% Typical PAE at 12 GH- 1 dB Typical NF