TGF2023-05 데이터시트 PDF ( Data sheet )

TGF2023-05 25 Watt Discrete Power GaN on SiC HEMT Key Features Frequency Range: DC - 18 GH- 43.9 dBm Nominal Psat at 3 GH- 56% Maximum PAE 17.8 dB Nominal Power Gain Bias: Vd = 28 - 32 V, Idq = 500 mA, Vg = -3.6 V Typical Technology: 0.25 um Power GaN on SiC Chip Dimensions: 0.82 x 1.44 x 0.

Product Data Sheet Discrete MESFET TGF1350-SCC Key Features and Performance 0.5 um x 300 um FET 1.5 dB Noise Figure with 11dB Associated Gain at 10 GH- 2.5 dB Noise Figure with 7 dB Associated Gain at 18 GH- All-gold Metallization for High Reliability Recessed Gate Structure Description The

Product Data Sheet Discrete MESFET TGF1350-SCC Key Features and Performance 0.5 um x 300 um FET 1.5 dB Noise Figure with 11dB Associated Gain at 10 GH- 2.5 dB Noise Figure with 7 dB Associated Gain at 18 GH- All-gold Metallization for High Reliability Recessed Gate Structure Description The

Applications Defense & Aerospace High-Reliability Test and Measurement Commercial Broadband Wireless TGF2018 180 um Discrete GaAs pHEMT Product Features Frequency Range: DC - 20 GH- 22 dBm Typical Output Power - P1dB 14 dB Typical Gain at 12 GH- 55% Typical PAE at 12 GH- 1 dB Typical NF