TGF2960-SD 데이터시트 PDF ( Data sheet )

TGF2960-SD 0.5 Watt DC-5 GH- Packaged HFET Key Features Frequency Range: DC-5 GH- Nominal 900 MH- Application Board Performance: TOI: 40 dBm 28 dBm Psat, 27 dBm P1dB Gain: 19 dB Input Return Loss: -10 dB Output Return Loss: -5 dB Bias: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V (Typical) Package D

Product Data Sheet Discrete MESFET TGF1350-SCC Key Features and Performance 0.5 um x 300 um FET 1.5 dB Noise Figure with 11dB Associated Gain at 10 GH- 2.5 dB Noise Figure with 7 dB Associated Gain at 18 GH- All-gold Metallization for High Reliability Recessed Gate Structure Description The

Product Data Sheet Discrete MESFET TGF1350-SCC Key Features and Performance 0.5 um x 300 um FET 1.5 dB Noise Figure with 11dB Associated Gain at 10 GH- 2.5 dB Noise Figure with 7 dB Associated Gain at 18 GH- All-gold Metallization for High Reliability Recessed Gate Structure Description The

Applications Defense & Aerospace High-Reliability Test and Measurement Commercial Broadband Wireless TGF2018 180 um Discrete GaAs pHEMT Product Features Frequency Range: DC - 20 GH- 22 dBm Typical Output Power - P1dB 14 dB Typical Gain at 12 GH- 55% Typical PAE at 12 GH- 1 dB Typical NF