TGF4350 데이터시트 PDF ( Data sheet )

Advance Product Information 300um Discrete pHEMT TGF4350-EPU Key Features and Performance 0.25um pHEMT Technology DC 22 GH- Frequency Range 1.2 dB NF, 14.5 dB Associated Gain at 10 GHz, 3V Operation Floating Source Configuration Chip Dimensions 0.5080 mm x 0.4064 mm Primary Applications 17

Product Data Sheet Discrete MESFET TGF1350-SCC Key Features and Performance 0.5 um x 300 um FET 1.5 dB Noise Figure with 11dB Associated Gain at 10 GH- 2.5 dB Noise Figure with 7 dB Associated Gain at 18 GH- All-gold Metallization for High Reliability Recessed Gate Structure Description The

Product Data Sheet Discrete MESFET TGF1350-SCC Key Features and Performance 0.5 um x 300 um FET 1.5 dB Noise Figure with 11dB Associated Gain at 10 GH- 2.5 dB Noise Figure with 7 dB Associated Gain at 18 GH- All-gold Metallization for High Reliability Recessed Gate Structure Description The

Applications Defense & Aerospace High-Reliability Test and Measurement Commercial Broadband Wireless TGF2018 180 um Discrete GaAs pHEMT Product Features Frequency Range: DC - 20 GH- 22 dBm Typical Output Power - P1dB 14 dB Typical Gain at 12 GH- 55% Typical PAE at 12 GH- 1 dB Typical NF